Non-linear tethers for suspended devices

ABSTRACT

A suspended device structure comprises a substrate, a cavity disposed in a surface of the substrate, and a device suspended entirely over a bottom of the cavity. The device is a piezoelectric device and is suspended at least by a tether that physically connects the device to the substrate. The tether has a non-linear centerline. A wafer can comprise a plurality of suspended device structures. A device structure can comprise a device over a sacrificial portion or cavity and a tether with a tether opening extending to the sacrificial portion or cavity. The tether or tether opening can have a T shape. The tether can have a tether length at least one third as large as a device length and the device can have a device length at least twice as large as a device width.

PRIORITY APPLICATION

This application is a continuation-in-part of U.S. Pat. ApplicationSerial No. 16/669,499, filed on Oct. 30, 2019, which is incorporated byreference herein in its entirety.

TECHNICAL FIELD

The present disclosure generally relates to structures for suspendingdevices (e.g., micro-electro-mechanical piezoelectric acoustic resonatormicro-devices) on substrates and to source wafers having componenttether structures.

BACKGROUND

Micro-electro-mechanical systems (MEMS) incorporate a wide variety ofmicro-devices used in mechanical systems that are typically provided ondevice substrates and constructed using photolithographic methods andmaterials found in the integrated circuit and semiconductor foundryindustries. For example, surface and bulk acoustic wave filters formedin piezo-electric materials filter applied electronic signals byconverting the electronic signals to acoustic waves in thepiezo-electric materials. The acoustic waves resonate at frequenciesdependent on the device structure and are then output as filteredelectronic signals whose frequencies correspond to the resonant acousticwaves. Thin-film bulk acoustic resonators use piezo-electric filmshaving thicknesses in the micron and sub-micron range. Both surface andbulk acoustic resonators are typically formed on and in contact withdevice substrates. The presence of the device substrate can dampen theacoustic waves or require acoustic isolation from the surroundingmedium, for example using acoustic reflectors (e.g., acoustic mirrors).

A piezo-electric device suspended over a cavity in a device substrateprovides a device structure that is mostly free to oscillateindependently of the device substrate, for example as described in“Piezoelectric Aluminum Nitride Vibrating Contour-Mode MEMS Resonators”by Gianluca Piazza, Philip J. Stephanou, and Albert P. Pisano, Journalof Microelectrochemical Systems, Volume 15, Issue 6, December 2006, pp.1406-1418. Such a suspended device can be supported over the cavity byone or more tethers provided to anchor the device to correspondinglocations on walls or edges of the cavity leaving the remainder of thedevice free to vibrate. The devices are formed on a silicon substrateand released from the silicon substrate with an XeF₂ dry etch used toform the cavity. Such an etch process and chemistry can, however, bedifficult to use and problematic in and with some device substratematerials and structures. For example, XeF₂ can be incompatible withmetals that are useful for electrodes used in piezo-electric devices,requiring additional protective encapsulation layers and consequentpre-process steps. Furthermore, XeF₂ etching can cause physical stressto the tethers, to the devices, or to both the tethers and the devices,possibly damaging or destroying them.

There is a need, therefore, for alternative structures, methods, andmaterials for making piezoelectric resonators and, more generally, formaking suspended micro-electro-mechanical devices that, for example,benefit from increased mechanical isolation (e.g.,micro-electro-mechanical (MEM) devices).

Substrates with electronically active devices distributed over theextent of the substrate may be used in a variety of electronic systems,for example, in flat-panel display devices such as flat-panel liquidcrystal or organic light emitting diode (OLED) displays, in imagingsensors, and in flat-panel solar cells. The electronically activedevices are typically either assembled on the substrate, for exampleusing individually packaged surface-mount integrated-circuit componentsand pick-and-place tools, or by coating a layer of semiconductormaterial on the substrate and then photolithographically processing thesemiconductor material to form thin-film circuits on the substrate.Individually packaged integrated-circuit components typically havesmaller transistors with higher performance than thin-film circuits butthe packages are larger than can be desired for highly integratedsystems.

Methods for transferring small, active devices (e.g., components) fromone substrate to another are described in U.S. Pat. No. 7,943,491, U.S.Pat. No. 8,039,847, and U.S. Pat. No. 7,622,367. In these approaches,small integrated circuits are formed on a native semiconductor sourcewafer. The small, unpackaged integrated circuits, or chiplets, arereleased from the native source wafer by pattern-wise etching portionsof a sacrificial layer located beneath the chiplets, leaving eachchiplet suspended over an etched sacrificial layer portion by a tetherphysically connecting the chiplet to an anchor separating the etchedsacrificial layer portions. A viscoelastic stamp is pressed against theprocess side of the chiplets on the native source wafer, adhering eachchiplet to an individual stamp post. The stamp with the adhered chipletsis removed from the native source wafer. The chiplets on the stamp postsare then pressed against a non-native target substrate or backplane withthe stamp and adhered to the target substrate. In another example, U.S.Pat. No. 8,722,458 entitled Optical Systems Fabricated by Printing-BasedAssembly teaches transferring light-emitting, light-sensing, orlight-collecting semiconductor elements from a wafer substrate to adestination substrate or backplane.

Stamps comprising many individual posts can transfer many thousands ofchiplets in a single transfer operation. It is important, therefore, tocarefully control the etching and printing process, for example bycarefully controlling the component, anchor, and tether structures, tomicro-transfer print systems at a high yield with reduced costs. Thus,there is a need for structures, methods, and materials for constructing,releasing, and printing chiplets from a source wafer to a non-nativetarget substrate.

SUMMARY

The present disclosure provides, inter alia, structures having devicessuspended over bottoms of cavities in a substrate. Suspended devices canhave improved mechanical isolation as compared to devices disposed on asubstrate surface. By using non-linear tethers to connect devices to asubstrate, etching of the substrate to form cavities under the devicescan be improved such that imperfections or damage to the devices isreduced or eliminated.

In some aspects, the present disclosure is directed to a suspendeddevice structure comprising: a substrate; a cavity disposed in a surfaceof the substrate; and a device suspended entirely over a bottom of thecavity, the device comprising a piezoelectric material. The device issuspended at least by a tether that physically connects the device tothe substrate, for example in a tether direction extending from an edgeof the device to an edge of the cavity, and the tether has a non-linearcenterline. A non-linear centerline comprises two or more points (e.g.,has two or more portions) that are non-collinear with each other. Thecenterline can comprise a plurality of straight-line segments, at leasta portion of the centerline can be curved, or the centerline can form anacute or obtuse angle.

According to some embodiments, the tether comprises a tether deviceportion having a tether device portion centerline that extends from thedevice and a tether substrate portion having a tether substrate portioncenterline that extends from the substrate. The tether substrate portionis physically connected to the tether device portion, and the tetherdevice portion centerline is non-collinear with the tether substrateportion centerline.

According to some embodiments, (a) the tether device portion centerlineis a line segment that is straight, (b) the tether substrate portioncenterline is a line segment that is straight, or (c) both (a) and (b).According to some embodiments, (a) the tether device portion centerlineextends substantially orthogonally to an edge of the device; (b) thetether substrate portion centerline extends substantially orthogonallyto an edge of the cavity; or (c) both (a) and (b). According to someembodiments, the tether device portion centerline is separated from thetether substrate portion centerline by a distance that is at least twicea minimum of a width of the tether in a direction orthogonal to at leastone of the tether device portion centerline and the tether substrateportion centerline. The direction can be, but is not necessarily,parallel to an edge of the device or an edge of the cavity. The distancecan be at least twice an average or maximum width of the tether.

According to some embodiments, the tether comprises a tether connectionportion having a tether connection portion centerline that physicallyconnects the device portion to the substrate portion and the tetherconnection portion has a tether connection portion centerline connectedto the tether device portion centerline and to the tether substrateportion centerline. The tether connection portion centerline can beorthogonal to at least one of the tether device portion centerline andthe tether substrate portion centerline, wherein the tether connectionportion centerline forms an oblique angle with respect to the centerlineof the tether device portion, or wherein the tether connection portioncenterline forms an oblique angle with respect to the centerline of thetether device portion.

According to some embodiments, the tether divides into branches. Ones ofthe branches can be attached to the device or to the substrate, or both.Each branch can be longer (or shorter) than an undivided tether portionof the tether. The lengths of the branches can be identical ornon-identical.

According to some embodiments, the tether is a first tether and thesuspended device structure comprises a second tether that physicallyconnects the device to the substrate. The second tether can be disposedon a side of the device directly opposite the device from the firsttether. The second tether can be a mirror reflection of the firsttether. The second tether can have a rotated orientation with respect ofthe first tether. According to some embodiments, a size and shape of thesecond tether is substantially identical to a size and shape of thefirst tether.

According to some embodiments, the tether extends from a wall of thecavity. According to some embodiments, the tether extends from astructure disposed on a surface of the substrate.

According to some embodiments, the substrate comprises ananisotropically etchable material. The substrate can be amonocrystalline silicon or a compound semiconductor. In someembodiments, the monocrystalline silicon has a (100) orientation. Insome embodiments, the monocrystalline silicon has a (111) orientation.The device can be native to the substrate. The device can be disposedcompletely in the cavity, at least partially in the cavity, or thedevice can be disposed above the cavity.

According to some embodiments, the tether is X-shaped, V-shaped,Y-shaped, S-shaped, double Y-shaped, acute Z-shaped, obtuse Z-shaped,right Z-shaped. In some embodiments, wherein (i) a vertex of the tetheris disposed near an edge of the device (e.g., and is not a vertex of aright angle) or (ii) the centerline comprises at least one tether branchjunction, the centerline does not comprise any right angle at each ofthe at least one tether branch junction.

According to some embodiments, the tether comprises an electricallyconductive material in electrical contact with the device or anelectrical conductor is disposed on a surface of the tether andelectrically connected to the device. In some embodiments, the devicecomprises an acoustic resonator (e.g., a surface acoustic waveresonator, a bulk acoustic wave resonator, a film bulk acoustic waveresonator, or a thin-film bulk acoustic wave resonator). In someembodiments, the device is an acoustic wave filter (e.g., a bulk orsurface acoustic wave filter). In some embodiments, the device is apiezoelectric sensor. In some embodiments, the device is an integratedcircuit, an application-specific integrated circuit (ASIC), or anoptoelectronic device that emits or receives light.

According to some embodiments, a suspended device structure comprises: asubstrate; a cavity disposed in a surface of the substrate; and a devicesuspended entirely over a bottom of the cavity, the device comprising adevice material and one or more electrodes disposed on one or more sidesof the device material, wherein the device is suspended at least by atether that physically connects the device to the substrate. The tetherhas a non-linear centerline, and:

-   (i) the one or more electrodes are in contact with at least 10% of    at least one side of the device material,-   (ii) the device comprises a piezoelectric material,-   (iii) a long dimension of the device is aligned with a normal    direction of fast etch planes of the substrate,-   (iv) the device comprises piezoelectric material,-   (v) the tether is X-shaped, V-shaped, Y-shaped, S-shaped, double    Y-shaped, acute Z-shaped, obtuse Z-shaped, or right Z-shaped,-   (vi) the tether has a branched centerline,-   (vii) a separation between a first tether portion and a second    tether portion of the tether in a direction orthogonal to at least    one of the first tether portion and the second tether portion is    greater than or equal to a width of the tether,-   (viii) or any combination thereof.

According to some embodiments, a method of making a suspended devicestructure comprises: forming a device on a substrate entirely over asacrificial portion of the substrate; forming a tether having anon-linear centerline physically connecting the device to the substratein a tether direction; and etching the sacrificial portion of thesubstrate without etching the device or the tether to form a cavitydisposed in a surface of the substrate and to suspend the deviceentirely over a bottom of the cavity, and:

-   (i) the one or more electrodes are in contact with at least 10% of    at least one side of the device material,-   (ii) the device comprises a piezoelectric material,-   (iii) a long dimension of the device is aligned with a normal    direction of fast etch planes of the substrate,-   (iv) the device comprises piezoelectric material,-   (v) the tether is X-shaped, V-shaped, Y-shaped, S-shaped, double    Y-shaped, acute Z-shaped, obtuse Z-shaped, or right Z-shaped,-   (vi) the tether has a branched centerline,-   (vii) a separation between a first tether portion and a second    tether portion of the tether in a direction orthogonal to at least    one of the first tether portion and the second tether portion is    greater than or equal to a width of the tether,-   (viii) or any combination thereof.

According to some embodiments, forming the tether comprises one or bothof: forming a layer on the substrate and patterning the layer andpattern-wise depositing material. In some embodiments, forming thedevice comprises printing an unpackaged bare die component on anintermediate substrate disposed on the substrate.

Structures and methods described herein enable a piezoelectric resonatorwith improved performance, construction processes, and materials.

The present disclosure provides, inter alia, methods and structures forreleasing a tethered micro-transfer-printable device from a source waferfaster, more efficiently, and more effectively. According to someembodiments of the present disclosure, a device structure comprises asubstrate (e.g., a source wafer or a native source wafer on which thedevice is formed) and a patterned sacrificial layer defining orcomprising a sacrificial material disposed on or in the substrate. Thesacrificial layer can be a portion of the substrate. The patternedsacrificial layer defines sacrificial portions laterally spaced apart byanchors. Each sacrificial portion can be at least partially exposed. Adevice (component) can be disposed entirely over each sacrificialportion and can be connected to at least one anchor by a tether. Thetether comprises or has a hole or tether opening that extends throughthe tether to the sacrificial portion. According to some embodiments,the patterned sacrificial layer comprises a semiconductor material, thesacrificial portion comprises a semiconductor material, or both. Thesemiconductor material can be silicon or a compound semiconductor andcan be the same material as the sacrificial material, or different. Thesemiconductor material can be crystalline silicon having a crystalstructure of {100}.

According to embodiments of the present disclosure, a device structurecomprises a substrate having a sacrificial layer comprising asacrificial portion adjacent to an anchor portion, a device disposedcompletely over the sacrificial portion, a tether that physicallyconnects the device to the anchor portion, and a tether opening disposedin the tether that extends through the tether to the sacrificialportion. The tether opening can be in contact with the anchor portion orextend into the anchor portion, can be in contact with the device, canbe in contact with both the anchor portion and the device, or can extendinto the anchor portion and be in contact with the device. The tetheropening can have a T-shape comprising an opening cross bar and anopening upright, and the opening cross bar can be in contact with theanchor portion or extend into the anchor portion. The tether opening canhave a T-shape comprising an opening cross bar and an opening upright,and the opening upright can be in contact with the device.

According to some embodiments of the present disclosure, the device canhave a first edge having a device length and a second edge having adevice width, the device length can be longer than the device width, andthe tether connects to the first edge. The device width can be nogreater than one half of the device length. The tether can have a tetherlength and the tether length can be at least one third of the devicelength.

In some embodiments, the substrate comprises silicon 100.

According to some embodiments, device has a device bottom adjacent tothe substrate and the device bottom is bent, curved, curled, or warped.

In some embodiments, at least a part of the sacrificial portion is acavity, recess, or gap.

According to some embodiments of the present disclosure, a devicestructure comprises a substrate, a device disposed completely over arecess in the substrate, and a tether that physically connects thedevice to an anchor portion disposed on the substrate such that thedevice is suspended over the recess by the tether. The tether can have atether opening that extends through the tether to the sacrificialportion.

According to embodiments of the present disclosure, a device structurecomprises a substrate having a sacrificial layer comprising or defininga sacrificial portion adjacent to an anchor portion, a device disposedcompletely over the sacrificial portion, and a tether that physicallyconnects the device to the anchor portion. The tether can have a T-shapecomprising a tether crossbar and tether upright with the tether crossbar attached to the anchor portion. A tether opening can be disposed inthe tether that extends through the tether. The tether cross bar can bein contact with the anchor portion. The tether upright ca be in contactwith the device. The substrate can comprise silicon 100. The device canhave a device bottom adjacent to the substrate and the device bottom canbe bent, curved, curled, or warped. At least a part of the sacrificialportion can be a cavity, recess, or gap. The device can have devicelength and a device width and the device width can be no greater thanone half of the device length. The tether can have a tether length andthe tether length can be at least one third of the device length.

According to some embodiments of the present disclosure, a devicestructure comprises a substrate, a device disposed completely over arecess in or on the substrate, and a tether that physically connects thedevice to an anchor portion disposed on the substrate such that thedevice is suspended over the recess by the tether. The tether can have aT-shape comprising a tether crossbar and tether upright with the tethercross bar attached to or extending into the anchor portion.

According to embodiments of the present disclosure, a device structure,comprises a substrate having a sacrificial layer defining or comprisinga sacrificial portion adjacent to an anchor portion, a device disposedcompletely over the sacrificial portion, wherein the device has a devicelength and the device length extends along a device edge to a deviceend, a first tether that physically connects the device to the anchorportion, and a second tether that physically connects the device to theanchor portion. The first tether can be closer to the second tether thanto the device end and the second tether can be closer to the firsttether than to the device end. The device can have a device width, andthe device length can be longer than the device width. The device canhave a device edge and a device end on the device edge, the devicehaving a device length taken along the device edge. According to someembodiments, the device has a second device edge side having a devicewidth, the device length is longer than the device width, and the firsttether and the second tether are connected to the device along thedevice edge. The device width can be no greater than one half of thedevice length. The tether can have a tether length and the tether lengthcan be at least one third of the device length. The substrate cancomprise silicon 100. The device can have a device bottom adjacent tothe substrate and the device bottom can be bent, curved, curled, orwarped. At least a part of the sacrificial portion can be a cavity,recess, or gap.

According to some embodiments, a device structure comprises a substrate,a device disposed completely over a recess in or on the substrate,wherein the device has a device edge and a device end on the deviceedge, the device having a device length taken along the device edge, afirst tether that physically connects the device to an anchor portiondisposed on the substrate, and a second tether that physically connectsthe device to the anchor portion. The first tether and the second tethercan suspend the device over the recess and the first tether can becloser to the second tether than to the device end and the second tethercan be closer to the first tether than to the device end.

According to embodiments of the present disclosure, a device structurecomprises a substrate having a sacrificial layer defining or comprisinga sacrificial portion adjacent to an anchor portion, a device disposedcompletely over the sacrificial portion, a first tether that physicallyconnects the device to the anchor portion, and a second tether thatphysically connects the device to the anchor portion. The first tethercan be spatially separated from the second tether by a distance that canbe no greater than a combined length of the first tether and the secondtether. The device can have a first device edge having a device lengthand a second device edge having a device width, the device length islonger than the device width, and the first tether and the second tetherare connected to the device along the first device edge. The device canhave a device length and a device width, and the device length can belonger than the device width. The device width can be no greater thanone half of the device length. The first tether can be closer to secondtether than to an end of device 20. The substrate comprises silicon 100.The device can have a device bottom adjacent to the substrate and thedevice bottom can be bent, curved, curled, or warped. At least a part ofthe sacrificial portion can be a cavity, recess, or gap.

According to embodiments of the present disclosure, a device structurecomprises a substrate, a device disposed completely over a recess in oron the substrate, a first tether that physically connects the device toan anchor portion disposed on the substrate, and a second tether thatphysically connects the device to the anchor portion. According to someembodiments, the first tether is spatially separated from the secondtether by a distance that is no greater than a combined length of thefirst tether and the second tether.

According to some embodiments, the etchant material that etches thesacrificial portion is tri-methyl ammonium hydroxide (TMAH) or potassiumhydroxide (KOH).

According to some embodiments of the present disclosure, (i) the deviceis encapsulated with an encapsulating material, (ii) the anchor isencapsulated with or comprises an encapsulating layer, or (iii) both (i)and (ii). The tether can comprise the encapsulating material or theencapsulating material can form the tether. The encapsulating materialcan be at least partially in direct contact with the sacrificialportion.

According to some embodiments of the present disclosure, a method ofmaking a device structure comprises the step of providing a substrate,e.g., a native source wafer. The substrate can comprise a patternedsacrificial layer or a patterned sacrificial layer can be disposed onthe substrate. The patterned sacrificial layer can comprise asacrificial material disposed on or in the substrate. The patternedsacrificial layer can comprise sacrificial portions laterally spacedapart by anchors. Devices are disposed entirely over each sacrificialportion and connected to at least one anchor by a tether. The tethercomprises a hole or tether opening that extends through the tether tothe sacrificial portion. The tether opening can be made in the samepatterning process that defines the tether, for example aphotolithographic process. The sacrificial portion is etched, forexample anisotropically etched to release the device from the substrateso that the device is physically connected by the tether to the anchorportion.

Structures and methods described herein enable an efficient, effective,and fast release of a micro-transfer printable device or component froma substrate (e.g., a native source wafer on or in which the device isdisposed or formed).

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other objects, aspects, features, and advantages ofthe present disclosure will become more apparent and better understoodby referring to the following description taken in conjunction with theaccompanying drawings, in which:

FIG. 1A is a perspective of a suspended device structure, according toillustrative embodiments of the present disclosure;

FIG. 1B is a cross-section and enlargement corresponding to crosssection line A of FIG. 1A;

FIG. 1C is a plan view of FIGS. 1A and 1B indicating cross section lineA;

FIG. 1D is a plan view corresponding to FIGS. 1A, 1B, 1C and indicatingtether and device centerlines;

FIG. 2A is a cross section of a device structure with electrodesaccording to illustrative embodiments of the present disclosure;

FIG. 2B is a cross section of a device structure with electrodes and avia according to illustrative embodiments of the present disclosure;

FIG. 2C is a cross section of a device structure with electrodes and avia according to illustrative embodiments of the present disclosuretaken along cross section line A of FIG. 2D;

FIG. 2D is a plan view of a device structure with electrodes and a viaaccording to illustrative embodiments of the present disclosure;

FIG. 3 is a plan view of an etched device with a straight tether usefulin understanding embodiments of the present disclosure;

FIG. 4 is a plan view of a device with a non-linear tether useful inunderstanding embodiments of the present disclosure;

FIGS. 5-7 are plan views of suspended device structures with non-lineartethers according to illustrative embodiments of the present disclosure;

FIGS. 8-11 are plan views of branched tether structures according toillustrative embodiments of the present disclosure;

FIGS. 12-13 are cross sections of suspended device structures havingnon-linear tethers according to illustrative embodiments of the presentdisclosure;

FIGS. 14-15 are cross sections of suspended device structures havingnon-linear tethers according to illustrative embodiments of the presentdisclosure;

FIG. 16 is a cross section illustrating suspended device structureshaving non-linear tethers and devices on a source wafer taken alongcross section line A of FIG. 1C according to illustrative embodiments ofthe present disclosure;

FIG. 17 is a cross section illustrating suspended device structures anddevices on a source wafer taken along cross section line B of FIG. 1Caccording to illustrative embodiments of the present disclosure;

FIGS. 18-22 are plan view micrographs of suspended device structures anddevices on source wafers taken along cross section lines A of FIG. 1Caccording to illustrative embodiments of the present disclosure;

FIG. 23 is a flow diagram according to illustrative methods of thepresent disclosure;

FIG. 24A is a plan view of a device structure and FIG. 24B is awidth-wise cross section of the device structure of FIG. 24A takenacross cross section line A according to illustrative embodiments of thepresent disclosure;

FIG. 24C is a detail plan view of a T-shape useful in understandingillustrative embodiments of the present disclosure;

FIG. 24D is a length-wise cross section along cross section line B ofFIG. 24A according to illustrative embodiments of the presentdisclosure;

FIGS. 25A and 25B are plan views of device structures according toillustrative embodiments of the present disclosure;

FIG. 26A is a plan view of a device structure and FIG. 26B is a crosssection of the device structure of FIG. 26A taken across cross sectionline A according to illustrative embodiments of the present disclosure;

FIG. 26C is a plan view of a device structure having a T-shape tetheropening extending into an anchor portion according to illustrativeembodiments of the present disclosure;

FIG. 27A is a plan view of a device structure and FIG. 27B is a crosssection of the device structure of FIG. 27A taken across cross sectionline A useful in understanding illustrative embodiments of the presentdisclosure;

FIG. 28A is a perspective of a wedge useful in understandingillustrative embodiments of the present disclosure, FIG. 28B shows theperspective of FIG. 28A with orthogonal cross section lines A and B,FIG. 28C is a cross section of FIG. 28B taken across cross section lineA, and FIG. 28D is a cross section of FIG. 28B taken along cross sectionline B; and

FIG. 29 is a micrograph of a wedge useful in understanding illustrativeembodiments of the present disclosure.

Features and advantages of the present disclosure will become moreapparent from the detailed description set forth below when taken inconjunction with the drawings, in which like reference charactersidentify corresponding elements throughout. In the drawings, likereference numbers generally indicate identical, functionally similar,and/or structurally similar elements. The figures are not drawn to scalesince the variation in size of various elements in the Figures is toogreat to permit depiction to scale.

DETAILED DESCRIPTION OF CERTAIN EMBODIMENTS

The present disclosure provides, inter alia, a structure and method forconstructing piezoelectric acoustic resonator micro-devices. Suchpiezoelectric micro-devices convert electrical energy provided byelectrodes disposed on the micro-device into mechanical energy. Themicro-device is sized and shaped to resonate at a desired frequency.Mechanical vibration at the desired resonant frequency is converted toelectrical energy by the piezoelectric material to provide a filteredelectrical signal.

Piezoelectric acoustic resonators have been demonstrated in a variety oftypes, for example with surface acoustic waves in, for example, asurface acoustic wave (SAW) filter, in a bulk acoustic wave (BAW)filter, a film bulk acoustic resonator (FBAR), or a thin-film bulkacoustic resonator (TFBAR). Such resonators are fixed to a substrate andcan incorporate acoustic reflectors or acoustic mirrors that inhibit thedissipation of mechanical energy into the substrate and promoteresonance at the desired frequency. Other piezoelectric acousticresonators are suspended over a cavity in a substrate by straighttethers physically connecting the resonator to the substrate in astraight line. The resonator is therefore free to vibrate independentlyof the substrate, except for any confounding effects from the tethers,thereby reducing mechanical energy losses and providing a greater deviceefficiency.

Suspended piezoelectric acoustic resonators can be constructed bypatterning a bottom electrode on a substrate, disposing and (e.g.,patterning) piezoelectric material over the bottom electrode, and thenpatterning a top electrode over the piezoelectric material to form anacoustic resonator. In some embodiments, the bottom electrode, thedevice and the top electrode materials are first deposited and thenseparately patterned or patterned together in a common step. Thesubstrate material beneath the bottom electrode is etched, for examplewith a dry etch such as XeF₂, to form the cavity and suspend thepiezoelectric acoustic resonator over the cavity. In some processes, thecavity etch can be initiated via wet etch, for example when exposed to ahot bath of tetramethylammonium hydroxide (TMAH) or potassium hydroxide(KOH), and finalized with the dry XeF₂ etch. The top and bottomelectrodes and piezoelectric material are patterned to form tethers thatconnect the main body of the piezoelectric acoustic resonator to thesubstrate. Wet etching processes can form bubbles that mechanicallystress the resonator or tethers and possibly damage them.

Furthermore, the present disclosure recognizes that a dry etch materialsuch as XeF₂ can be difficult to use and problematic in and with somedevice substrate materials and structures. For example, XeF₂ can beincompatible with metals, such as gold, that are useful for electrodesused in piezo-electric devices. Furthermore, XeF₂ etching can causephysical stress to the tethers and/or devices, possibly damaging ordestroying them. The etch can be a pulsed etch repeated every twoseconds in which a gas is repeatedly introduced into a processingchamber, a plasma is discharged, and the gas is vented, exposing theresonator to repeated high and low vacuum pressures that canmechanically stress the resonator. Moreover, vacuum chamber valveoperation can cause vibrations. These various mechanical stresses cancause the resonator and its supporting wafer to vibrate and form cracksin the piezoelectric materials, electrodes, or tethers or even detachthe resonator from the substrate during etching, thereby significantlyimpairing final device performance or rendering the final devicenon-functional.

In order to mitigate such undesired outcomes, the resonator and tetherscan be fully encapsulated and undergo multiple chemical baths to removeany potential contaminants or any organic residues at the surface. Afteretching to release the resonator from the substrate (so that there is nodirect physical attachment between the device and the substrate),encapsulation materials can be removed to avoid interfering with theacoustic response of the resonator. These additional operations addexpense to a manufacturing process and can themselves crack or breaksuspended devices or tethers, for example with capillary forces. Thereis a need therefore for alternative methods and structures for making asuspended micro-device.

The present disclosure provides, inter alia, suspended device structureshaving non-linear tethers and methods of their formation. By usingnon-linear tethers, the final devices can be released from an underlyingsubstrate and suspended over a cavity, for example using wet etchantssuch as TMAH or KOH rather than a dry etchant such as XeF₂, can haveimproved mechanical isolation, and damage thereto incurred duringetching is reduced or eliminated. As described in further detail below,non-linear tethers can have, for example, right, obtuse, or acuteZ-shaped tethers (e.g., tethers with right or oblique angles), X-shapedtethers, V-shaped tethers, Y-shaped tethers or double Y-shaped tethers(having orthogonal segments or non-orthogonal segments), or serpentinetethers. A non-linear tether can comprise linear tether segments withcenterlines that that are non-collinear (e.g., not collinear or notformed in a common line).

According to illustrative embodiments of the present disclosure and asillustrated in the perspective and corresponding cross section, planview, and detail view of FIGS. 1A-1D (collectively FIG. 1 ) andmicrograph of FIG. 21 , a suspended device structure 99 comprises asubstrate 10, a cavity 12 disposed in the substrate 10, and a device 20suspended entirely over a bottom of cavity 12 at least by a tether 30that physically connects device 20 to substrate 10 in a tether direction31 so that tether 30 extends from an edge of device 20. (In FIG. 1 ,tethers 30 are made of continuous material, for example formed in asingle photolithographic deposition.) Tether 30 has a centerline 32 thatcomprises non-collinear points (e.g., non-collinear portions) and istherefore a non-linear centerline 32. According to some embodiments ofthe present disclosure and as illustrated in FIG. 1D, tether 30 has afirst tether portion (e.g., tether device portion 34) separated from asecond tether portion (e.g., tether substrate portion 36) in a directionorthogonal to tether direction 31, for example so that the first andsecond portions are not in direct contact. The separation can be adistance D that is at least a width W of any portion of tether 30 sothat distance D is equal to or greater than width W. Width W can be awidth measured at a cross section of tether 30. In some embodiments,distance D is no less than an average width, a minimum width, or amaximum width of tether 30. Distance D can be measured in a directionparallel to a device edge 21 from which tether 30 extends. In someembodiments, “a direction parallel to edge of device 21” can refer to adirection parallel to a tangent of an edge of device 21, for examplewhen device 20 has a curved edge 21, or a direction orthogonal to anangular bisector of a vertex formed by two edges of device 21, forexample when tether 30 extends from a vertex of a device 20 with apolygonal perimeter. Device 20 can have a length L that is a longestdimension of device 20 orthogonal to tether direction 31 (e.g., parallelto device edge 21). In some embodiments, the respective centerlines 32of the first and second tether portions are separated by at least adistance L3 that is at least twice a width of any portion of tether 30in a direction. The direction can be orthogonal to at least one of thecenterline of the first portion and the centerline of the secondportion, orthogonal to tether direction 31, or parallel to device edge21. The width can be, for example, a maximum width, an average width, ora minimum width.

Device 20 can be or can include any one or more of a piezoelectricdevice, a micro-device, an integrated circuit, an electromechanicalfilter, an acoustic resonator, or a power source that harvestsvibrations to provide electrical power but is not limited to any ofthese devices. Device 20 can be native to substrate 10, or non-native tosubstrate 10. A piezoelectric device is a device that compriseselectrodes and piezoelectric material that converts electrical signalsprovided by the electrodes to mechanical energy, converts mechanicalenergy to electrical signals provided on the electrodes, or convertselectrical signals to mechanical energy and mechanical energy toelectrical signals through electrodes (e.g., converts electrical signalsto mechanical energy and then back to electrical signals that arepossibly modified or filtered). Electrodes can be disposed on one sideof device 20 (e.g., a top side opposite substrate 10) or on opposing topand bottom sides of device 20. Electrodes can be solid or interdigitatedon one side or both sides of device 20 and can cover and be in contactwith at least 10% (e.g., at least 20%, 40%, 50%, 60%, 80%) of thepiezoelectric material. If electrodes cover too small of an area on thepiezoelectric material, a conversion of electrical energy in theelectrodes to mechanical energy in the piezoelectric material can beinefficient and inadequate. According to some embodiments of the presentdisclosure, the electrodes cover and are in contact with at least 10% ofthe piezoelectric material area.

A micro-device is any device that has at least one dimension that is inthe micron range, for example having a planar extent from 2 microns by 5microns to 200 microns by 500 microns (e.g., an extent of 2 microns by 5microns, 20 microns by 50 microns, or 200 microns by 500 microns) and athickness of from 200 nm to 200 microns (e.g., at least or no more than2 microns, 20 microns, or 200 microns). Device 20 can have any suitableaspect ratio or size in any dimension and any useful shape, for examplea rectangular cross section or top or bottom surface. Device 20 can bean electromechanical filter that filters electrical signals throughmechanically resonant vibrations, for example an acoustic resonator or apower source that responds to mechanical vibrations with electricalpower. As shown in the cross section of FIGS. 2A and 2B taken alongcross section line A of a structure generally in accordance with FIG.1C, device 20 of suspended device structure 99 can comprise a layer ofpiezoelectric material 54, for example, but not limited to, aluminumnitride (AlN) or potassium sodium niobate (KNN), with a top electrode 50on a top side of the piezoelectric material 54 and a bottom electrode 52on a bottom side of the piezoelectric material 54 opposite the top side.Top and bottom electrodes 50, 52 are collectively electrodes. Topelectrode 50 or bottom electrode 52, or both, can extend along a surfaceof tether 30 (e.g., a top surface and a bottom surface thereof,respectively) as shown in FIG. 2A. As shown in FIG. 2B, bottom electrode52 can pass through a via and extend over a top side of tether 56. Asshown in the cross section of FIG. 2C and plan view of FIG. 2D, bottomelectrode 52 can pass through a via and extend over a top side of thesame tether 56 on which the top electrode 50 is disposed. Generally,various electrode configurations are possible, such as, for example,those typically found in SAW resonators, BAW resonators, FBARs, orTFBARs and are expressly contemplated as embodiments of the presentdisclosure. In some embodiments, device 20 is an acoustic wave filter,such as a SAW filter, a BAW filter, an FBAR filter, or a TFBAR filter.In some embodiments, device 20 is a piezoelectric sensor.

Tethers 30 can comprise any suitable tether material 56 and canincorporate one or more layers, for example one or more layers similarto or the same as those layer(s) of device 20, for example comprisingelectrode materials and/or piezoelectric materials 54, for example asshown in FIG. 2A, or comprising dielectric materials. Top and bottomelectrodes 50, 52 can extend over or be a part of tethers 30 toelectrically connect device 20 to external devices or electricalconnections. Electrodes can comprise a patterned layer of metal, orlayer(s) of metal, for example titanium and/or gold in, for example,thicknesses from 100 nm to 1 micron. Other materials, such asdielectrics, for example silicon dioxide or silicon nitride, can be usedin tethers 30. Substrate 10 can be any useful substrate in which cavity12 can be formed, for example as found in the integrated circuit ordisplay industries. Substrate 10 can be chosen, for example, based ondesirable growth characteristics (e.g., lattice constant, crystalstructure, or crystallographic orientation) for growing one or morematerials thereon. In some embodiments of the present disclosure,substrate 10 is an anisotropically etchable. For example, substrate 10can be a monocrystalline silicon substrate with a (100) or (111)orientation. An anisotropically etchable material etches at differentrates in different crystallographic directions, due to reactivities ofdifferent crystallographic planes to a given etchant. In particular,silicon (100) is a readily available, relatively lower costmonocrystalline silicon material for which non-linear tethers 30 of thepresent disclosure enable etching and releasing device 20 from substrate10. For example, potassium hydroxide (KOH) displays an etch rateselectivity 400 times higher in silicon [100] crystal directions than insilicon [111] directions. In the particular case of silicon (100), useof a non-linear tether 30 (as opposed to a linear tether) can ensurecomplete release of device 20 and tether 30 when substrate 10 is etched,for example using KOH, in order to suspend device 20 with tether 30.Generally, monocrystalline substrates 10 having other orientations (suchas a (111) orientation) are less prone to incomplete release of device20 and a tether when using a linear tether. Moreover, devices 20 made onor in a silicon (100) crystal structure can have less stress andtherefore less device bowing after release.

According to some embodiments of the present disclosure, tethers 30 havea non-linear (e.g., non-collinear) centerline 32 (includingnon-collinear points). A centerline 32 is a set of points that bisecttether 30 in a plane that is substantially parallel to a surface ofsubstrate 10. Centerline 32 extends along a length of tether 30. Alength of tether 30 can be longer than a width W of tether 30.Centerline 32 can divide tether 30 into two halves, for example halvesthat are geometrically congruent or similar, that can completely overlieeach other, or that are reflections or rotations of each other.Centerline 32 can comprise points midway between tether edges 33 oftether 30, for example at the midpoint of a straight line segment thatintersects opposite tether edges 33 of tether 30, for example tetheredges 33A and 33B as shown in FIG. 1D. Opposite tether edges 33 can bethe closest edge of tether 30 on an opposite side of centerline 32. Forexample, as shown in FIG. 1D, centerline 32 is a distance L1 from firsttether edge 33A and a distance L2 from second tether edge 33B in adirection orthogonal to centerline 32, and L1 is equal to L2. Centerline32 can be continuous or discontinuous. For example, if tether 30 has aportion with an asymmetric cross section adjacent to a portion with asymmetric cross section can have a discontinuous centerline 32. At adiscontinuous point of centerline 32, no orthogonal direction can bedefined. A non-linear centerline 32 is a centerline comprising pointsthat are not all in a common straight line substantially in a commonplane (i.e., comprising non-collinear points). As used herein,centerlines 32, device edges 21, widths W of tether 30, and separationdistances D are drawn or measured in a plane parallel to a surface ofsubstrate 10 (e.g., a bottom of cavity 12 in substrate 10). Non-linear(e.g., serpentine) tethers 30 can have different structures orarrangements, as shown in FIGS. 5-11 and 18-22 .

Tethers 30 with a centerline 32 comprising non-collinear points provideadvantages in etching cavity 12 to release device 20 from substrate 10,where substrate 10 comprises an anisotropically etchable material (suchas monocrystalline silicon (100) and (111)). As illustrated in FIG. 3 ,with such substrates, etching under a conventional straight tether ondirectly opposite sides of a device 20 properly oriented with respect tothe crystal structure will not release device 20 from underlyingsubstrate 10 if the straight tether extends in a direction orthogonal todevice 20, as is commonly done. Without wishing to be bound to anyparticular theory, an etchant applied to the crystal surface will forman inverted pyramid P in a crystalline substrate 10 and will stopetching when it reaches a crystal etch stop plane defined by the crystalstructure. Where convex corners exist in the etched structure, theetchant can attack the material from two directions, in at least one ofwhich the etch will proceed, or from a different plane in which etchingwill proceed. When only concave corners remain that expose crystalplanes that are resistant to etching, the etch will stop when theinverted pyramid P shape is attained. Because the ends of device 20 haveconvex corners Cx, the etch can proceed to release the ends but when theetchant reaches the straight tethers only concave corners Cv exposingcrystal planes resistant to etching remain, so the etch stops and thestraight tether and the portion of device 20 in a line with the straighttethers will not be released, as shown in FIG. 3 . (A released device 20is physically connected to substrate 10 only by tethers 30 and is nototherwise directly connected to substrate 10. A released tether 30 isphysically connected only to device 20 and only to substrate 10 at or onan edge of cavity 12 (e.g., at an anchor portion 18). After a desiredcomplete release, there is no physical attachment from the bottom ofdevice 20 or tether 30 to substrate 10.)

In contrast and according to some embodiments of the present disclosureas illustrated in FIG. 4 , a non-linear tether 30 having a non-linearcenterline 32 has convex corners Cx in non-linear tether 30 as well asdevice 20 that are accessible for etching, for example when constructedon, in, or over an anisotropically etchable monocrystalline substrate,e.g., a silicon (100) or silicon (111) substrate 10. However, becausethe etch fronts will cease to advance once a concave corner C_(V) ismet, it is preferred that the portions of tether 30 that extend in thesame direction are separated in a direction orthogonal to the directionin which the portions of tether 30 extends, for example by a distance Dgreater than or equal to a width W of tether 30 (and the respectivecenterlines 32 can be separated by a distance L3 greater than or equalto twice a width W of tether 30, for example in a direction orthogonalto at least one of the portions, in a direction orthogonal to tetherdirection 31 or parallel to device edge 21). Because the crystallineetch planes of the crystalline substrate 10 are angled (not orthogonalto a surface of substrate 10, for example about 54.7 degrees), to ensurea complete release of device 20 from substrate 10 device and substratetether portions 34, 36 are separated, for example by a distance D equalto or greater than a width of tether 30. Tetramethylammonium hydroxide(TMAH) or potassium hydroxide (KOH) can be used to anisotropically etchmonocrystalline silicon (100) or (111) and such materials arecontemplated for use in structures and methods of the presentdisclosure.

Certain embodiments of the present disclosure provide a structure,materials, and method for a suspended device structure 99 comprising adevice 20 suspended over a cavity 12 in a substrate 10 by non-lineartethers 30. Substrate 10 can be an anisotropically etchable materialsuch as silicon (100). Device 20 is released from substrate 10 with anetchant, leaving device 20 suspended over cavity 12 is substrate 10 bynon-linear tethers 30. Such a structure has the advantage of usingetching materials and process that are less stressful to devices 20 andtethers 30, improving manufacturing yields. Moreover, the presentdisclosure recognizes that a source of parasitic resonance modes indevice 20, when a piezo-electric device, can result specifically fromstraight tethers used to connect device 20 to substrate 10 over bottomof cavity 12. Non-linear tethers 30 of the present disclosure can haveimproved performance by reducing the number or magnitude of parasiticresonance modes in device 20, where device 20 comprises piezoelectricmaterials 54. Furthermore, using anisotropically etchable substrate 10material in substrate 10 can reduce contamination during etching, suchas particles, as compared to using isotropically etchable materials suchas oxides that are etched with etchants such as hydrofluoric acid orhydrochloric acid.

As shown in the embodiments illustrated in FIGS. 1A-1D, 4-6B, 8-11, and19-23 , centerline 32 comprises non-collinear line segments that arestraight. Thus, each line segment comprises collinear points, but theline segments themselves are not collinear. For example, as shown inFIG. 5 , tether 30 comprises a tether device portion 34 that attaches todevice edge 21 of device 20 at an orthogonal angle, a tether substrateportion 36 that attaches to an edge of substrate 10 (not shown) at anorthogonal angle, and a tether connection portion 38 that physicallyconnects tether device portion 34 to tether substrate portion 36,optionally at an orthogonal angle. Centerlines 32 of each of tetherportions 34, 36, 38 are straight line segments. Thus, FIG. 5 illustratesan example of a right Z-shaped tether 30. Centerlines 32 of tetherdevice portion 34 and tether substrate portion 36 can be offset,parallel, and orthogonal to device edge 21 of device 20 and/or an edgeof cavity 12 (e.g., as shown in FIG. 1 ) and centerline 32 of tetherconnection portion 38 is orthogonal to the centerlines 32 of both tetherdevice portion 34 and tether substrate portion 36, as is also the casein FIG. 1 .

To facilitate device 20 release from substrate 10 and suspend device 20over cavity 12 (e.g., as shown in FIG. 1 ), tether device portion 34 andtether substrate portion 36 are separated in a direction orthogonal to atether direction, for example by a distance no less than a width W oftether device portion 34 or a width W of tether substrate portion 36,for example as shown in FIGS. 1 and 5 . As shown in FIG. 5 , tetherdevice portion 34 is separated from tether substrate portion 36 by adistance D that is no less than a width W of tether device portion 34 ortether substrate portion 36. Thus, in some embodiments wherein a devicecenterline is orthogonal to centerlines 32 of tether device portion 34and tether substrate portion 36, tether device portion 34 and tethersubstrate portion 36 are separated in a direction of the devicecenterline, for example by a length of tether connection portion 38 thatis no less than a width W of tether device portion 34 or tethersubstrate portion 36.

A separation distance D of tether connection portion 38 between tetherdevice and substrate portions 34, 36 that is greater than or equal to awidth W of tether 30 can be, but is not necessarily, equivalent to acenterline 32 of a first tether portion (e.g., tether device portion 34)separated from a centerline 32 of a second tether portion (e.g., tethersubstrate portion 36) by a distance L3 that is at least twice a width Wof tether 30 in a direction parallel to an edge of device 20 or cavity12 since centerline 32 bisects tether 30, if the first and second tetherportions have a constant width. Thus, in some embodiments, a tetherdevice portion 34 centerline 32 and a tether substrate portion 36centerline 32 are separated by a distance that is at least twice a widthof tether 30, for example in a direction orthogonal to at least one oftether device portion 34 centerline 32 and tether substrate portion 36centerline 32. A width W of tether 30 can be a width W of any portion oftether 30, for example a minimum, average, or maximum width W, and canbe a dimension of tether 30 that is shorter than a length of tether 30in a plane substantially parallel to a surface of substrate 10 A lengthof tether 30 is a length of centerline 32 of tether 30 extending fromdevice 20 to substrate 10. By ensuring separation by a distance Dbetween tether device portion 34 and tether substrate portion 36,etching beneath tether 30 is facilitated and can proceed quicker andrelease from substrate 10 is assured.

According to some embodiments of the present disclosure, a suspendeddevice structure 99 comprises a substrate 10, a cavity 12 disposed in asurface of substrate 10, and a device 20 suspended entirely over abottom of cavity 12, device 20 comprising a device material and one ormore electrodes (e.g., top and bottom electrodes 50, 52) disposed on oneor more sides of device 20. Device 20 is suspended at least by a tether30 that physically connects device 20 to substrate 10. Tether 30 has anon-linear centerline 32, and (i) the one or more electrodes are incontact with at least 10% of at least one side of device 20, (ii) device20 comprises a device material that is a piezoelectric material 54, or(iii) both (i) and (ii).

According to some embodiments and as illustrated in FIGS. 1, 4 , asuspended device structure 99 comprises a substrate 10 comprisingmonocrystalline silicon having a (100) orientation, a cavity 12 disposedin a surface of substrate 10, and a device 20 suspended entirely over abottom of cavity 12. Device 20 is suspended at least by a tether 30 thatphysically connects device 20 to substrate 10. Tether 30 has anon-linear centerline 32 and a length L of device 20 is oriented withrespect to a crystalline structure of substrate 10 so that an etchantapplied to substrate 10 will etch completely beneath device 20 to formcavity 12, for example in a fast etch direction. Length L of device 20can be a long dimension of device 20, for example the extent of device20 in its largest dimension. Length L of device 20 (e.g., a largestdimension of device 20) can be aligned with a normal direction of fastetch planes for substrate 10 (that is, with a normal to those planes) inorder to promote complete release during etching.

As shown in the embodiments illustrated in FIG. 6A, centerline 32 oftether 30 reverses direction, forming a zigzag path having acute anglesbetween the connected portions (e.g., between tether device portion 34and tether connection portion 38 and between tether substrate portion 36and tether connection portion 38). As shown in FIG. 6A, a portion ofcenterline 32 can extend from tether device portion 34 to tethersubstrate portion 36 in a direction toward device 20, forming an acuteangle in centerline 32. Thus, FIG. 6A illustrates an example of an acuteZ-shaped tether 30. As shown in FIG. 6B, centerline 32 can extend fromtether device portion 34 to tether substrate portion 36 in a directiontoward an edge 18 of cavity 12 in substrate 10. FIGS. 6A and 6B arecollectively referred to as FIG. 6 .

Although tethers 30 are illustrated as having a constant width W inFIGS. 5, 6A, and 8 in a plane and direction parallel to a surface ofsubstrate 10, in some embodiments tethers 30 have a variable width W ina direction parallel to a surface of substrate 10, as shown in FIG. 6B(where tether device portion 34 and tether connection portion 38 have anarrower width than tether substrate portion 36).

As shown in the embodiments illustrated in FIG. 7 , tether 30 withcenterline 32 is curved, for example at least partially curved (e.g., iscurved). FIG. 7 illustrates a serpentine tether. A serpentine tether 30can be, for example, S-shaped. A serpentine tether 30 can have a shapeof a portion of a sine wave.

As shown in the embodiments illustrated in FIGS. 8-11 and as illustratedin the micro-graphs of FIGS. 18-20 , in some embodiments of the presentdisclosure, tether 30 comprises an undivided tether portion 42 thatdivides into branches 40. As shown in FIGS. 8 and 18-20 , branches 40are attached to substrate 10 at an edge 18 of cavity 12. As shown inFIGS. 9-11 , branches 40 are attached to device 20. In some embodiments,as illustrated in FIG. 11 , branches 40 attach to both device 20 andsubstrate 10 and form an X-shaped tether 30. In some embodiments, asillustrated in FIG. 10 , tether 30 can be double Y-shaped. Branches 40can be longer or shorter than undivided tether portion 42 of tether 30.Branches 40 can be wider or narrower than undivided tether portion 42 oftether 30. For branched tethers 30, each branch 40 comprises acenterline 32 that bisects branch 40 (assuming no asymmetry in thebranch 40). Tethers 30 comprising branches 40 longer than undividedtether portion 42 can facilitate releasing device 20 from substrate 10by etching cavity 12 without damaging tethers 30 or device 20.

According to some embodiments of the present disclosure and as shown inFIGS. 1-11 and 18-23 , suspended device structure 99 can comprisemultiple tethers 30 that attach device 20 to substrate 10, for exampletwo tethers 30 disposed on opposing sides of device 20 and directlyopposite each other. Tethers 30 can have centerlines 32 that intersect acenter or centerline of device 20 in a dimension so that tethers 30symmetrically suspend device 20 over cavity 12 and device 20 extends anequal distance in opposite directions from tethers 30. Thus, suspendeddevice structure 99 can comprise a first tether 30 that physicallyconnects device 20 to substrate 10 and a second tether 30 different fromthe first tether 30 that physically connects device 20 to substrate 10.First and second tethers 30 can be disposed on opposite sides of device20 and attach to opposite sides of cavity 12 and can be disposeddirectly opposite each other with respect to device 20 or cavity 12, orboth. First tether 30 can be a mirror reflection of second tether 30,for example as shown in FIGS. 1, 6B, 7, and 21 . In some embodiments,first tether 30 is a rotation of second tether 30 (e.g., has a rotatedorientation with respect to second tether 30, and vice versa), forexample as shown in FIGS. 5, 6A, and 23 . Where first and second tethers30 are symmetric, they can be both a mirror reflection and a rotation,for example as shown in FIGS. 8-11 and 18-20 . According to someembodiments of the present disclosure, a size and shape of second tether30 is substantially identical to a size and shape of first tether 30.Thus, according to embodiments, tether 30 can be at least partiallyX-shaped (e.g., as shown in FIG. 11 ), V-shaped (e.g., as shown in FIG.19 ), Y-shaped (e.g., as shown in FIGS. 8, 9, 18 ), S-shaped (e.g., asshown in FIG. 7 ), double Y-shaped (e.g., as shown in FIG. 10 ), acuteZ-shaped (e.g., as shown in FIG. 6A), obtuse Z-shaped (e.g., as shown inFIG. 6B), oblique Z-shaped (e.g., either acute or obtuse), or rightZ-shaped (e.g., as shown in FIGS. 1, 5, 21-23 ).

FIGS. 1A, 1C, 1D, 4-11, and 18-22 show devices 20 connected to substrate10 by two tethers 30 disposed on opposite sides of device 20. However,in some embodiments, only one tether 30 disposed on one side of device20 connects device 20 to substrate 10. Additionally, in someembodiments, two or more (e.g., three or more) tethers 30 disposed onone or more sides of device 20 connect device 20 to substrate 10.

Top electrode 50 can extend along a surface of first tether 30 (e.g., atop side of first tether 30) and bottom electrode 52 can extend along asurface of second tether 30 (e.g., a bottom side of second tether 30,for example as shown in FIG. 2A).

As shown in some embodiments and as illustrated in FIGS. 12-15 , devices20 can be attached to substrate 10 in a variety of ways and with acorresponding variety of structures. As shown in FIG. 12 in a crosssection of suspended device structure 99 taken across cross section lineB of FIG. 1C, tethers 30 are attached to a side, wall, anchor, or edge18 of cavity 12. As shown in FIG. 13 , tethers 30 are attached to asurface of substrate 10 above cavity 12. As shown in FIG. 14 , device 20can be constructed in a common layer or plane with tethers 30 or, asshown in FIG. 15 , device 20 can be disposed in a layer beneath tethers30. Thus, device 20 that is suspended entirely over a bottom portion ofcavity 12 can be disposed, for example, completely within cavity 12, atleast partially in cavity 12, or completely above cavity 12. The variousstructures can be made using photolithographic methods and materialsknown in the integrated circuit and MEMS industry, for example, and theselection of a specific structure can complement a desired constructionprocess for a desired device 20.

According to some embodiments of the present disclosure and as shown inFIGS. 16 and 17 , a wafer structure 98 comprises a substrate 10comprising a patterned sacrificial layer 14 defining one or more anchorportions 18 separating one or more etched sacrificial portions 16.Etched sacrificial portions 16 can correspond to cavities 12. One ormore devices 20 are each suspended entirely over an etched sacrificialportion 16 of the one or more etched sacrificial portions 16 at least bya tether 30 that physically connects device 20 to an anchor portion 18of the one or more anchor portions 18. Tether 30 has a centerline 32that comprises non-collinear points. A first tether portion can beseparated from a second tether portion, e.g., in a direction parallel toa device edge 21 from which tether 30 extends. In some embodiments, thetethers are separated by a distance D that is at least a width W oftether 30. In some embodiments, centerline 32 can have a firstcenterline portion separated from a second centerline portion by adistance L3 that is at least twice a width W of tether 30. In someembodiments, device 20 comprises a device material and one or moreelectrodes disposed on one or more sides of device 20, and (i) the oneor more electrodes are in contact with at least 10% of at least one sideof device 20, (ii) the device material is a piezoelectric material 54,or (iii) both (i) and (ii).

Substrate 10 can be a source wafer and each device 20 can be disposedcompletely over a sacrificial portion 16. FIG. 16 is a cross sectiontaken along cross section A of FIGS. 1A and 1C of a source wafer(substrate 10) with multiple etched sacrificial portions 16 forminginverted pyramids P (cavity 12) and devices 20 suspended over the cavity12. FIG. 17 is a cross section of taken along cross section B of FIG. 1Cof a source wafer (substrate 10) with multiple sacrificial portions 16(cavity 12) and devices 20 suspended over the cavity 12. FIGS. 16 and 17illustrate devices 20 connected to source wafer 10 with right Z-shapedtethers. (For clarity, the inverted pyramids P are not illustrated inFIGS. 1B, 2A-2C, and 12-15 .)

FIGS. 18-22 are micrographs of a device 20 physically connected tosubstrate 10 and suspended over cavity 12 (formed by etching a portionof substrate 10). FIG. 18 illustrates branched tethers 30 correspondingto FIG. 8 . In FIG. 18 , branches 40 are narrower than undivided tetherportion 42 and the tether branch junctions do not have any right angles.FIG. 19 illustrates branches 40 that connect to a common point on device20 (in a V shape). In FIG. 19 , a vertex of the tether is disposed nearan edge of the device. Although not shown, a suspended device structure99 could comprise branches 40 that connect to a common point onsubstrate 10 (e.g., an edge 18 of cavity 12). FIG. 20 comprises branches40 are not angled but have a line segment portion that is parallel to anedge 18 of cavity 12 and a line segment portion that is orthogonal tothe edge 18 of cavity 12. That is, in FIG. 20 , the tether branchjunctions have right angles. FIG. 21 corresponds to FIG. 1 and FIG. 22corresponds to FIG. 5 . Tethers 30 are mirrored in FIG. 21 . In FIG. 21(and separately in FIG. 22 ), tethers 30 have substantially identicalsizes and shapes and can be congruent if rotated or reflected.

As shown in FIGS. 18-22 , embodiments of the present disclosure havebeen constructed and demonstrated using an AlN piezoelectric material 54with top and bottom electrodes 50, 52 to form a rectangular device 20with opposing tethers 30 disposed at a central point of device 20 in thelong direction. Bottom electrode 52 extends under one tether 30 and topelectrode 50 extends over the top of device 20 (as shown in FIG. 2A).

As shown in FIG. 23 , embodiments of the present disclosure can beconstructed by providing a source wafer 10 with a sacrificial layer 14in step 100. The source wafer 10 serves as substrate 10 as describedabove and can be provided as monocrystalline silicon (100). In step 110,source wafer 10 is processed to form device 20 and, in step 120 tethers30, (such as any electrodes) when source wafer 10 is etched). Device 20and tethers 30 can be constructed in a common step (so that steps 110and 120 are the same step, or in separate steps 110 and 120, with thesame, similar, or different materials using photolithographic methodsand materials known in the integrated circuit and MEMs industries.Tethers 30 can be formed by, for example, depositing a layer of andpatterning it or by pattern-wise depositing material.

Sacrificial portions 16 are etched in step 130, for example with TMAH orKOH, to form cavity 12 beneath device 20 and tethers 30 and releasedevice 20 and tethers 30 from source wafer 10, leaving device 20physically connected with tethers 30 to an anchor portion 18 at the edge18 of cavity 12 or on a portion of source wafer 10 at the edge 18 ofcavity 12. Thus, according to some embodiments, a method of making asuspended device structure 99 comprises forming a device 20 on asubstrate 10 entirely over a sacrificial portion 16 of substrate 10,forming a tether 30 having a non-linear centerline 32, and etchingsacrificial portion 16 of substrate 10 without substantially etchingdevice 20 or tether 30 to form a cavity 12 disposed in a surface ofsubstrate 10 and to suspend device 20 entirely over a bottom of cavity12, wherein (a) a first tether portion is separated from a second tetherportion by a distance that is at least a width W of tether 30, (b)device 20 comprises a device material and one or more electrodesdisposed on one or more sides of the device material, and (i) the one ormore electrodes are in contact with at least 10% of at least one side ofthe device material, (ii) the device material is a piezoelectricmaterial 54, or (iii) both (i) and (ii), or (c) both (a) and (b).Forming tether 30 can comprise any one or more of: forming a layer onsubstrate 10 and patterning the layer, pattern-wise depositing material,and forming device 20 comprises printing an unpackaged bare diecomponent on an intermediate substrate disposed on substrate 10.

According to various embodiments of the present disclosure, non-linear(e.g., non-collinear or serpentine) tethers 30 can comprise a variety ofshapes, as illustrated. In some embodiments, device 20 is a MEM devicethat employs acoustic resonance to process, respond to, or generateelectrical signals. Acoustic resonance in device 20 is a resonantmechanical vibration that can be affected by the structure of device 20,for example piezoelectric material 54, dielectric layers, protectiveencapsulation layers, or top and bottom electrodes 50, 52. Tethers 30can also affect the acoustic resonance of device 20. Hence, depending onthe desired nature of device 20 acoustic resonance (e.g., magnitude,frequency, wavelength, direction), different tether 30 structures can bepreferred. For example, sharp device 20 or tether 30 edges can inducehigh-frequency acoustic reflections and angled, or curved edges can tendto dampen or redirect such reflections, at least in device 20. Tethers30 can be disposed at locations that promote desired vibrations, forexample at null spots where vibrations are out of phase or extendingfrom one null spot to another on device 20. Thus, in some embodiments,tether 30 can be disposed at or near a midpoint of device edge 21 fromwhich it extends (and/or at or near a midpoint of cavity wall 18) or canbe offset toward one end of device edge 21 from which it extends.

The present disclosure provides, inter alia, structures and methods forimproving the release of a micro-transfer-printable device 20 structure97 from source wafer 10 (substrate 10) by etching, in particular as insome embodiments where sacrificial layer 14 in source wafer 10(substrate 10) comprises an anisotropically etchable crystallinesemiconductor material such as silicon {111} or silicon {100}. Accordingto some embodiments of the present disclosure, FIGS. 24A-24B, 25A-25B,and 26A-26C illustrate a device structure 97 comprising substrate 10 anda patterned sacrificial layer 14 disposed on or in substrate 10.Patterned sacrificial layer 14 defines sacrificial portions 16comprising a sacrificial material laterally spaced apart by anchorportions 18. Anchor portions 18 can be or include a non-sacrificialportion of sacrificial layer 14 (e.g., arranged to remain unetched by anetchant while sacrificial portion 16 is etched), can be disposed oversacrificial layer 14 (e.g., comprising a material deposited on aninitial substrate), or both. As illustrated, anchor portions 18 comprisea non-sacrificed portion of sacrificial layer 14 and material depositedon sacrificial layer 14, for example the same material deposited to formdevices 20 in a common step or a deposited encapsulating material (e.g.,encapsulation layer 80) in a common step. A device 20 is disposedentirely and completely over each sacrificial portion 16 and isphysically connected to anchor portion 18 by tether 30. An encapsulationlayer 80 comprising an encapsulation material can encapsulate any one orcombination of devices 20, tether 30, and anchor portion 18, for exampleas shown in FIGS. 25A-26C. In some embodiments, encapsulation layer 80forms tether 30 or a portion of tether 30 so that tether 30 comprisesencapsulation layer 80 or the encapsulation material. In someembodiments, encapsulation layer 80 forms anchor portion 18 or a portionof anchor portion 18. In some embodiments, sacrificial portion 16 isetched such that device remains suspended over recess (cavity) 12 in oron substrate 10 by tether 30 connected to anchor portion 18, for examplein accordance with FIGS. 25A-26C if sacrificial portion 16 were removedby an etchant. Recess 12 in or on substrate 10 is formed by etching ofsacrificial portion 16.

According to embodiments of the present disclosure, a tether opening 37is disposed in tether 30 that extends through tether 30. Tether opening37 can be a hole, for example a shaped hole. An etchant, for example aliquid etchant, can be disposed over tether 30 on a side of tether 30opposite sacrificial portion 16 and pass through tether opening 37 tocontact and etch sacrificial portion 16. Tether opening 37 can havevarious shapes and is necessarily smaller than tether 30 in at least onedimension. In some embodiments, tether opening 37 has a shapeapproximately similar or geometrically similar (e.g., having the samerelative proportions) as tether 30. Tether opening 37 can be in contactwith anchor portion 18 (for example as shown in FIGS. 24A, 24B, 25A,26A-26B), can be in contact with device 20 (for example as shown inFIGS. 25A-26C), in contact with both anchor portion 18 and device 20(for example as shown in FIGS. 25A, 26A-26B), or can extend into anchorportion 18 (for example as shown in FIGS. 25B, 26C). In someembodiments, device 20 comprises encapsulation layer 80 so that tether30 (and tether opening 37) in contact with encapsulation layer 80 isalso in contact with device 20. In some embodiments, device 20 andencapsulation layer 80 are separate structures so that tether 30 (andtether opening 37) in contact with encapsulation layer 80 is not incontact with device 20. In some embodiments in which tether opening 37contacts both anchor portion 18 and device 20, for example as shown inFIGS. 25A, 25B, tether 30 can be viewed as two separate and adjacenttethers 30 divided by tether opening 37.

In some embodiments, and as shown in FIG. 25A, tether opening 37 isrectangular and is in contact with and adjacent to anchor portion 18. Insome embodiments, and as shown in FIG. 25B, tether opening 37 isrectangular and extends into anchor portion 18 and overlaps a portion ofanchor 18. In some embodiments, and as shown in FIGS. 24A-24B and FIGS.26A-26C, tether 30 has a T-shape with a tether crossbar portion incontact with or extending into anchor portion 18 and a tether uprightportion in contact with device 20 or in contact with encapsulation layer80 encapsulating device 20. A T-shape 60 is illustrated separately inFIG. 24C with a crossbar 62 and upright 64. Similarly, tether opening 37can have an opening crossbar 62 and an opening upright 64. According tosome embodiments, opening crossbar 62 is in contact with anchor portion18, opening upright is in contact with device 20 or encapsulation layer80, or both (as shown in FIGS. 26A-26B). In some embodiments, tetheropening 37 crossbar 62 is at least partially disposed in anchor portion18 (as shown in FIG. 26C).

Micro-devices 20, such as certain of those of the present disclosure,typically incorporate layers of different materials, for exampleincluding one or more of semiconductors such as silicon or compoundsemiconductors such as III-V (e.g., GaAs or GaN) or II-VIsemiconductors, with or without doping, oxides such as silicon dioxide,nitrides such as silicon nitride, organic materials such as epoxies orresins, and metals. Such materials can be deposited in layers and canhave an inherent stress, for example from different types of atomswithin a crystalline structure or from different layers with differentcrystal structures. Stress can also be introduced or induced by anyencapsulating dielectric layer (e.g., encapsulation layer 80). Suchstress can cause a device to bend, warp, curve, or curl so that, forexample, a device top surface or device bottom surface 20B of device 20is curved, particularly after device 20 is at least partially releasedfrom substrate 10 so that recess 12 is formed from which any etchablematerial has been removed by etching, for example as shown in FIG. 24Dand FIG. 27B (where recess 12 is in the process of being formed). Thestress and consequent bending can stress tethers 30 connecting device 20to anchor portions 18. The device 20 stress can be so severe thattethers 30 can crack, especially tethers provided at opposite ends ofdevice 20. Such stress or cracking can prevent the successfulfabrication of device 20 (e.g., a suspended MEMS structure) that canwithstand elastomer-stamp Van der Waals contact forces duringmicro-transfer printing and can cause particulate contamination withinthe release chemical bath or otherwise during the stamp pickup process.This problem can be noticeable for devices 20 that have a longer devicelength 22 than a device width 24 (for example as shown in FIG. 24A) andcan be especially acute for devices 20 that have a device length 22 thatis at least twice as great as a device width 24 (e.g., device length 22is greater than or equal to two times device width 24).

According to embodiments of the present disclosure, these problems canbe mitigated by providing tethers 30 that are sufficiently large thatthey do not crack and, in some embodiments are centered symmetricallyabout the lengthwise center of device 20. Furthermore, a single tether30 rather than two or more tethers 30 can reduce particulatecontamination resulting from fracturing tether 30. Sufficiently largetethers 30 can, according to embodiments of the present disclosure, havea tether length 35 that is one third or greater than device length 22,as shown in FIG. 24A. However, the use of larger tethers 30 makes device20 pickup by a micro-transfer printing stamp more difficult, for atleast two reasons. First, a larger tether 30 is stronger and will notfracture as easily and, second, for sacrificial portions comprisinganisotropically etched material such as silicon {100} or silicon {111}and structures having only concave corners, etching proceeds much moreslowly in sacrificial portion 16 under tether 37 and requires a longeretch time to release device 20 from substrate 10 with a useful tether 30for micro-transfer printing. A longer etch time undesirably increasesmanufacturing time and can potentially damage other materials orstructures in device 20, for example that are etchable by the etchantbeing used albeit at an appreciably lower etch rate.

These issues are addressed, according to embodiments of the presentdisclosure, by providing tether opening 37 in tether 30. Tether opening37 provides access to etchants and can have convex angles that enablefast etching beneath tether 30. Sacrificial portion 16 etchants passthrough tether opening 37 to attack sacrificial portion 16 beneathtether 30 at convex corners, decreasing the time necessary to fullyrelease device 20 and tether 30 from substrate 10 and prepare device 20for micro-transfer printing with a stamp. Thus, a combination of arelatively larger tether 30 (e.g., having a tether length 35 that is atleast one third of device length 22) that suppresses problems withdevice 20 stress (often found in devices 20 having device length 22 atleast twice that of device width 24) with a tether opening 37 havingconvex corners enables fast and efficient device 20 release fromsubstrate 10. Thus, according to embodiments of the present disclosure,device 20 has a device length 22 that is longer than a device width 24.Device width 24 can be no greater than one half of device length 22.Tether 30 can have a tether length 25 that is at least one third ofdevice length 22. Tether 30 can have tether opening 37 and, in someembodiments, tether opening 37 has convex corners, for example as in aT-shape tether opening 37.

The use of a T-shape 60 tether 30 can assist in fracturing tether 30 ina controlled fashion that is more predictable with less particulatecontamination. T-shape 60 forms concave and convex corners that assistthe etch progression during device 20 release, reducing etch time.Planes exposed by the concave corners will etch to a depth similar to adepth of cavity 12 formed surrounding device 20. Planes exposed by theconvex corners assist etching underneath tether 30 without significantlyreducing the structural support provided by tether 30 connecting anchorportion 18 to device 20. Tether length 35 can be the length of tether 30in contact with either anchor portion 18 (as shown in FIG. 24A) ordevice 20 (not shown). According to embodiments of the presentdisclosure, therefore, a device structure 97 comprises a substrate 10having a sacrificial layer 14 comprising a sacrificial portion 16adjacent to an anchor portion 18, a device 20 disposed completely oversacrificial portion 16, and a tether 30 that physically connects device20 to anchor portion 18. Tether 30 can have a T-shape 60 comprising atether 30 crossbar 62 and tether 30 upright 64. In some embodiments,tether 30 cross bar 62 is attached to or in contact with anchor portion18, tether 30 upright 64 is attached to or in contact with device 20, orboth tether 30 cross bar 62 is attached to or in contact with anchorportion 18 and tether 30 upright 64 is attached to or in contact withdevice 20. In some embodiments, tether opening 37 is disposed in tether30 and extends through tether 30. Substrate 10 can comprise silicon 100.Device 20 can have a device bottom surface 24B adjacent to substrate 10and the device bottom surface 24B can be curved. Sacrificial portion 16can be a cavity, recess, or gap 12. Device 20 can have a device length22 and a device width 24 that is no greater than one half of devicelength 22. Tether 30 can have a tether length 35 and tether length 35can be at least one third of device length 22.

According to some embodiments of the present disclosure, a devicestructure, 97 comprises a substrate 10 having a sacrificial layer 14defining a sacrificial portion 16 adjacent to an anchor portion 18 and adevice 20 disposed completely over sacrificial portion 14. Device 20 hasa device length 22 and a device width 24. The device length 22 extendsin a direction along a device edge 21 to a device end 23. A first tether30A physically connects device 20 to anchor portion 18, a second tether30B physically connects device 20 to anchor portion 18, and first tether30A is closer to second tether 30B than to device end 23 and secondtether 30B is closer to first tether 30A than to device end 23. Devicelength 22 can be longer than device width 24 and device width 24 can beno greater than one half of device length 22. Tether 30 can have atether length 35 that is at least one third of device length 22.Substrate 10 can comprise silicon 100. Device 20 can have a devicebottom surface 24B adjacent to substrate 10 that is curved, curled, orwarped. Sacrificial portion 16 can be etched leaving recess 12.

According to some embodiments of the present disclosure, a devicestructure 97 comprises substrate 10 having sacrificial layer 14 defininga sacrificial portion 16 adjacent to anchor portion 18, a device 20disposed completely over sacrificial portion 16, a first tether 30A thatphysically connects device 20 to anchor portion 18, and a second tether30B that physically connects device 20 to anchor portion 18. Firsttether 30A is spatially separated from second tether 30B by a distancethat is no greater than the combined length of first tether 30A andsecond tether 30B. In some embodiments, device 20 has a device length 22and a device width 24, device length 22 extends along a device edge 21to a device end 23, and device length 22 is longer than device width 24,for example device width 24 is no greater than one half of device length22. Tether 30 can have a tether length and the tether length can be atleast one third of the device length. Substrate 10 can comprise silicon{100}, device 20 can have a device bottom surface 24B adjacent tosubstrate 10 that is curved, bent, warped, or curled. Sacrificialportion 16 can be etched leaving recess 12.

FIG. 27A-29 illustrate etched structures that result when a relativelylarge tether 30 has an extended tether length 35 in the absence oftether opening 37. FIG. 27A is a schematic bottom view and FIG. 27B is across section of a device 20, anchor portion 18, tether 30, and recess(cavity) 12 structure that results when sacrificial layer 16 ispartially etched to form recess 12 with no tether opening 37, forexample when sacrificial portion 16 comprises crystalline silicon, suchas silicon {100}. A roughly triangular wedge 70 of sacrificial portion16 material remains beneath tether 30 and in physical contact withanchor portion 18 after etching sacrificial portion 16 to form cavity,recess, or gap 12 and releasing device 20 from substrate 10. Wedge 70can eventually etch away but the etch time required is relativelylengthy compared to the time required to etch beneath device 20 and theetchant can therefore attack other structures, such as, in variousembodiments, one or more of device 20, anchor portion 18, and otherportions of tether 30. The presence of wedge 70 inhibits effectivetransfer printing of device 20 since tether 30 is not properly formedand device 20 can be incompletely released. As illustrated in FIGS.28A-28D, wedge 70 has two opposing parallel faces (e.g., a relativelysmall face in contact with and underside of tether 30 and the otherrelatively large face in contact with substrate 10) and angled sidefaces extending from substrate 10 (e.g., the floor of recess 12) to theunderside of tether 30. FIG. 28A is a perspective of wedge 70 (withcontrasting dashed lines showing a right-triangle point to more clearlyillustrate the angled side faces) and FIG. 28B showing the samestructure as FIG. 28A with the addition of orthogonal cross sectionlines A and B. FIG. 28C shows a cross section of wedge 70 taken alongcross section line A of FIG. 28B and FIG. 28D show a cross section ofwedge 70 taking along cross section line B of FIG. 28B. FIG. 29 is amicrograph of a wedge 70 formed during etching of sacrificial portion 16under device 20.

In certain embodiments, a source wafer (substrate 10) can be anystructure with a surface suitable for forming patterned sacrificiallayers 14, sacrificial portions 16 (cavity 12), anchor portion(s) 18,and (e.g., patterned) device(s) 20. For example, source wafers 10 cancomprise any anisotropically etchable material. Suitable semiconductormaterials can be silicon or silicon with a {100} crystal structure(e.g., orientation). A surface of source wafer 10 surface can besubstantially planar and suitable for photolithographic processing, forexample as found in the integrated circuit or MEMs art.

In some embodiments of the present disclosure, devices 20 are smallintegrated circuits, for example chiplets, having a thin substrate withat least one of (i) a thickness of only a few microns, for example lessthan or equal to 25 microns, less than or equal to 15 microns, or lessthan or equal to 10 microns, (ii) a width of 5-1000 microns (e.g., 5-10microns, 10-50 microns, 50-100 microns, or 100-1000 microns) and (iii) alength of 5-1000 microns (e.g., 5-10 microns, 10-50 microns, 50-100microns, or 100-1000 microns). Such chiplets can be made in a nativesource semiconductor wafer (e.g., a silicon wafer) having a process sideand a back side used to handle and transport the wafer usinglithographic processes. The devices 20 can be formed using lithographicprocesses in an active layer on or in the process side of the sourcewafer 10. Methods of forming such structures are described, for example,in U.S. Pat. 8,889,485. According to some embodiments of the presentdisclosure, source wafers 10 can be provided with devices 20,sacrificial layer 14 (a release layer), and tethers 30 already formed,or they can be constructed as part of the process in accordance withcertain embodiments of the present disclosure.

In some embodiments, devices 20 are piezoelectric devices formed on orin a semiconductor wafer, for example silicon, which can have acrystalline structure. Piezoelectric materials 54 can be deposited onsource wafer 10, for example by sputtering, evaporation, or chemicalvapor deposition. Suitable piezoelectric materials 54 can includealuminum nitride (AlN) or potassium sodium niobate (KNN) or otherpiezoelectric materials 54, such as lead zirconate titanate (PZT).

In certain embodiments, devices 20 can be constructed using foundryfabrication processes used in the art. Layers of materials can be used,including materials such as metals, oxides, nitrides and other materialsused in the integrated-circuit art. Devices 20 can have different sizes,for example, less than 1000 square microns or less than 10,000 squaremicrons, less than 100,000 square microns, or less than 1 square mm, orlarger. Devices 20 can have, for example, at least one of a length, awidth, and a thickness of no more than 500 microns (e.g., no more than250 microns, no more than 100 microns, no more than 50 microns, no morethan 25 microns, or no more than 10 microns). Devices 20 can havevariable aspect ratios, for example at least 1:1, at least 2:1, at least5:1, or at least 10:1. Devices 20 can be rectangular or can have othershapes.

As is understood by those skilled in the art, the terms “over” and“under” are relative terms and can be interchanged in reference todifferent orientations of the layers, elements, and substrates includedin the present disclosure. For example, a first layer on a second layer,in some implementations means a first layer directly on and in contactwith a second layer. In other implementations, a first layer on a secondlayer includes a first layer and a second layer with another layertherebetween.

Having described certain implementations of embodiments, it will nowbecome apparent to one of skill in the art that other implementationsincorporating the concepts of the disclosure may be used. Therefore, thedisclosure should not be limited to certain implementations, but rathershould be limited only by the spirit and scope of the following claims.

Throughout the description, where apparatus and systems are described ashaving, including, or comprising specific components or devices, orwhere processes and methods are described as having, including, orcomprising specific steps, it is contemplated that, additionally, thereare apparatus, and systems of the disclosed technology that consistessentially of, or consist of, the recited components or devices, andthat there are processes and methods according to the disclosedtechnology that consist essentially of, or consist of, the recitedprocessing steps.

It should be understood that the order of steps or order for performingcertain action is immaterial so long as the disclosed technology remainsoperable. Moreover, two or more steps or actions in some circumstancescan be conducted simultaneously. The disclosure has been described indetail with particular reference to certain embodiments thereof, but itwill be understood that variations and modifications can be effectedwithin the spirit and scope of the claimed invention.

PARTS LIST A cross section line B cross section line Cx convex corner Cvconcave corner D distance L length L1, L2, L3 distance P invertedpyramid W width 10 substrate / source wafer 12 cavity / recess / gap 14sacrificial layer 16 sacrificial portion 18 anchor portion / wall /cavity edge 20 device 20B device bottom surface 21 device edge 22 devicelength 23 device end 24 device width 30 tether 30A first tether 30Bsecond tether 31 tether direction 32 centerline 33 tether edge 33A firsttether edge 33B tether edge 34 tether device portion 35 tether length 36tether substrate portion 37 tether opening 38 tether connection portion40 branch 42 undivided tether portion 50 top electrode 52 bottomelectrode 54 piezoelectric material 56 tether material 60 T-shape 62crossbar 64 upright 70 wedge 80 encapsulation layer 97 device structure98 wafer structure 99 suspended device structure 100 provide sourcewafer with sacrificial layer step 110 form device over sacrificialportions step 120 form tether step 130 etch sacrificial portions step

1-20. (canceled)
 21. A device structure, comprising: a substrate havinga sacrificial layer defining a sacrificial portion adjacent to an anchorportion; a device disposed completely over the sacrificial portion,wherein the device has a device edge and a device end on the deviceedge, the device having a device length taken along the device edge; afirst tether that physically connects the device to the anchor portion;and a second tether that physically connects the device to the anchorportion, wherein the first tether is closer to the second tether than tothe device end and the second tether is closer to the first tether thanto the device end.
 22. The device structure of claim 21, wherein thedevice has a second device edge side having a device width, the devicelength is longer than the device width, and the first tether and thesecond tether are connected to the device along the device edge.
 23. Thedevice structure of claim 22, wherein the device width is no greaterthan one half of the device length.
 24. The device structure of claim21, wherein the tether has a tether length and the tether length is atleast one third of the device length.
 25. The device structure of claim21, wherein the substrate comprises silicon {100}.
 26. The devicestructure of claim 21, wherein the device has a device bottom adjacentto the substrate and the device bottom is bent, curved, curled, orwarped.
 27. A device structure, comprising: a substrate; a devicedisposed completely over a recess in or on the substrate, wherein thedevice has a device edge and a device end on the device edge, the devicehaving a device length taken along the device edge; a first tether thatphysically connects the device to an anchor portion disposed on thesubstrate; and a second tether that physically connects the device tothe anchor portion, wherein the first tether and the second tethersuspend the device over the recess and the first tether is closer to thesecond tether than to the device end and the second tether is closer tothe first tether than to the device end.
 28. A device structure,comprising: a substrate having a sacrificial layer defining asacrificial portion adjacent to an anchor portion; a device disposedcompletely over the sacrificial portion; a first tether that physicallyconnects the device to the anchor portion; and a second tether thatphysically connects the device to the anchor portion, wherein the firsttether is spatially separated from the second tether by a distance thatis no greater than a combined length of the first tether and the secondtether.
 29. The device structure of claim 28, wherein the device has afirst device edge having a device length and a second device edge havinga device width, the device length is longer than the device width, andthe first tether and the second tether are connected to the device alongthe first device edge.
 30. The device structure of claim 29, wherein thedevice width is no greater than one half of the device length.
 31. Thedevice structure of claim 28, wherein the first tether is closer tosecond tether than to an end of the device.
 32. The device structure ofclaim 28, wherein the substrate comprises silicon {100}.
 33. The devicestructure of claim 28, wherein the device has a device bottom adjacentto the substrate and the device bottom is bent, curved, curled, orwarped.
 34. A device structure, comprising: a substrate; a devicedisposed completely over a recess in or on the substrate; a first tetherthat physically connects the device to an anchor portion disposed on thesubstrate; and a second tether that physically connects the device tothe anchor portion, wherein the first tether is spatially separated fromthe second tether by a distance that is no greater than a combinedlength of the first tether and the second tether.
 35. The devicestructure of claim 34, wherein the device has a first edge having adevice length and a second edge having a device width, the device lengthis longer than the device width, and the first tether and the secondtether connect to the first edge.
 36. The device structure of claim 35,wherein the device width is no greater than one half of the devicelength.
 37. The device structure of claim 35, wherein the first tetherand the second tether each have a tether length and the tether length isat least one third of the device length.
 38. The device structure ofclaim 34, wherein the substrate comprises silicon {100}.
 39. The devicestructure of claim 34, wherein the device has a device bottom adjacentto the substrate and the device bottom is bent, curved, curled, orwarped.